Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Patent
1997-06-17
1999-09-28
Brown, Peter Toby
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
438482, 438149, 438799, 438308, 438486, 438487, H01L 21263
Patent
active
059603232
ABSTRACT:
Laser anneal processing of a semiconductor layer is repeated in a number of steps. Grain size is increased using high energy ELA for a first step, and grain sizes are uniformed using ELA with low energy for a later step. As a defective crystallization region occurs in an excessive energy region during the ELA for the first step, in the ELA for the second time, excessive energy is removed and the defective crystallization region is eliminated by reducing the energy to an optimal value, thereby improving the crystallinity of a p-Si layer.
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patent: 5306651 (1994-04-01), Masumo et al.
Electronic Display Forum '96 program cover sheet, Apr. 17-19, 1996.
List of presentations at Forum '96, including "Excimer Laser Annealing System SLA 3600", Apr. 19, No. 18. filed Jun. 17, 1997 for this application!.
James S. Im, et al., "Excimer Laser-Induced Crystallization of Thin Si Films for TFT Applications: Crystallized Microstructures and Responsible Transformation Mechanisms", AMLCDs, pp. 34-37.
M. Kamiya, et al., Excimer Laser Annealing SLA3600, pp. 24-25.
Ogata Hidenori
Wakita Ken
Brown Peter Toby
Duong Khanh
Sanyo Electric Co,. Ltd.
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