Laser alignment target

Details Laser alignment target Laser alignment target

2006-07-04

2006-07-04

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000, C438S672000, C438S691000

Reexamination Certificate

active

07071104

ABSTRACT:
A technique to form a structure with a rough topography in a planarized semiconductor process. The rough topography is formed by creating cored contacts. Subsequent process layers may be further stacked on top of the cored contacts in order to augment the nonplanar characteristics of the cored contacts. This rough topography structure may be used to align integrated circuits and wafers. An integrated circuit may be laser aligned using this alignment structure.

REFERENCES:
patent: 5130268 (1992-07-01), Liou et al.
patent: 5204288 (1993-04-01), Marks et al.

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