Laser ablation deposition process for semiconductor manufacture

Details Laser ablation deposition process for semiconductor manufacture Laser ablation deposition process for semiconductor manufacture

1991-02-08

1992-12-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437245, 21912168, 21912169, 21912173, 2191218, 427 96, 427271, 427272, 427444, 427597, H01L 21428, B05D 306, B05D 512, B23K 2600

Patent

active

051734419

ABSTRACT:
A semiconductor manufacturing process for laser ablation deposition (LAD) in which metal features are written from a source substrate onto a target substrate. The source substrate and target substrate are mounted in close proximity to one another within a vacuum chamber. A laser beam is scanned in a programmed sequence or selected pattern through a transparent target substrate and onto a metallic film formed on the source substrate. Ablation of the metal film and deposition onto the target substrate may be closely controlled by the laser being focused directly at the metal film on the source substrate and by the selection of a source substrate having a suitable thermal conductivity. The process may be further controlled by selective heating of the source substrate. The process can be used to ablate and deposit a single or multiple metal layers on the target substrate. Additionally, the target substrate may be an optically transparent substrate so that the process may be used to fabricate photomask, electro-optic, and acousto-optic devices, transducers, and integrated circuits on insulator substrate.

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H. M. Smith and A. F. Turner, "Vacuum Deposited Thin Films Using a Ruby Laser," Applied Optics vol. 4, No. 1, Jan. 1965 pp. 147-148.
Webster's Ninth New Collegiate Dictionary, 1985, Merriam-Webster Inc. p. 45.

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