Large value, compact, high yielding integrated circuit...

Details Large value, compact, high yielding integrated circuit... Large value, compact, high yielding integrated circuit...

2005-08-23

2005-08-23

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C257S306000

Reexamination Certificate

active

06933551

ABSTRACT:
An integrated circuit capacitor and an integrated circuit are provided. The integrated circuit capacitor includes at least first, second and third conducting plates. The first conducting plate is positioned between the second and third plates. A first dielectric layer is positioned between the first and third conducting plates. A second dielectric layer is positioned between the first and second conducting plates. An “overlap portion” of the second conducting plate extends beyond the edge of the first conducting plate and towards the third conducting plate. The capacitor is arranged so that the electrical breakdown voltage between the overlap portion and the third conducting plate is lower than the electrical breakdown voltage between the first and second conducting plates.

REFERENCES:
patent: 5166858 (1992-11-01), Frake et al.
patent: 5583359 (1996-12-01), Ng et al.
patent: 5739576 (1998-04-01), Shirley et al.
patent: 6573588 (2003-06-01), Kumamoto et al.
patent: 0 285 854 (1988-10-01), None
patent: 10326863 (1998-12-01), None

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