Large value capacitor for SOI

Details Large value capacitor for SOI Large value capacitor for SOI

1996-09-16

1998-06-23

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 71, 257350, 257305, 257532, H01L 29786, H01L 218242, H01L 27108

Patent

active

057708754

ABSTRACT:
Large capacitance, low-impedance decoupling capacitors in SOI and their method of fabrication. A high conductivity trench substrate contact is made adjacent to the capacitor by removal of insulator lining the capacitor by use of an extra mask thereby making a substrate contact when the trench is filled with doped polysilicon. The inventive process is compatible with and easily integrated into existing SOI logic technologies. The SOI decoupling capacitors are formed in trenches which pass through the silicon and buried oxide layers and into the underlying silicon substrate.

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