Large size semiconductor crystal with low dislocation density

Details Large size semiconductor crystal with low dislocation density Large size semiconductor crystal with low dislocation density

2005-03-15

2005-03-15

Deo, Duy-Vu N. (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

C117S224000, C117S900000

Reexamination Certificate

active

06866714

ABSTRACT:
A large semiconductor crystal has a diameter of at least 6 inches and a low dislocation density of not more than 1×104cm−2. The crystal is preferably a single crystal of GaAs, or one of CdTe, InAs, GaSb, Si or Ge, and may have a positive boron concentration of not more than 1×1016cm−3and a carbon concentration of 0.5×1015cm−3to 1.5×1015cm−3with a uniform concentration throughout the crystal. Such a crystal can form a very thin wafer with a low dislocation density. A special method and apparatus for producing such a crystal is also disclosed.

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