Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-30
2011-08-30
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S513000, C438S509000, C438S913000, C257SE21006, C257SE21077, C257SE21170, C257SE21169, C257SE21311
Reexamination Certificate
active
08008198
ABSTRACT:
A method for fabricating a copper indium diselenide semiconductor film is provided using substrates having a copper and indium composite structure. The substrates are placed vertically in a furnace and a gas including a selenide species and a carrier gas are introduced. The temperature is increased from about 350° C. to about 450° C. to initiate formation of a copper indium diselenide film from the copper and indium composite on the substrates.
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Kilpatrick Townsend & Stockton LLP
Nhu David
Stion Corporation
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