Large scale method and furnace system for selenization of...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S513000, C438S509000, C438S913000, C257SE21006, C257SE21077, C257SE21170, C257SE21169, C257SE21311

Reexamination Certificate

active

08008198

ABSTRACT:
A method for fabricating a copper indium diselenide semiconductor film is provided using substrates having a copper and indium composite structure. The substrates are placed vertically in a furnace and a gas including a selenide species and a carrier gas are introduced. The temperature is increased from about 350° C. to about 450° C. to initiate formation of a copper indium diselenide film from the copper and indium composite on the substrates.

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