Large scale high density semiconductor apparatus

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor

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257624, 257698, 257774, 257783, 437203, 437208, 437228, 437245, H01L 2348, H01L 2144

Patent

active

054632463

ABSTRACT:
A large scale semiconductor apparatus is provided which includes at least one semiconductor chip having electrodes. The semiconductor chip is bonded on an electrically insulating circuit substrate on which electrically conductive interconnection films are separately formed, and a plurality of through holes are formed in the semiconductor chip so as to pierce the semiconductor chip in the direction of the thickness thereof. Electrically conductive bodies are formed in the through holes, respectively, wherein each of the conductive bodies electrically connects a predetermined electrode of the semiconductor chip to a predetermined interconnection film formed on the circuit substrate.

REFERENCES:
patent: 3648131 (1972-03-01), Stuby
patent: 4417392 (1983-11-01), Ibrahim et al.
patent: 4835598 (1989-05-01), Higuchi

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