Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-11-08
1998-01-27
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257291, 257293, 257443, 257448, 257459, H01L 31062, H01L 31113, H01L 3100
Patent
active
057124990
ABSTRACT:
A photodetector arrangement capable of detecting high-power-light flux and including a set of elementary photodetectors each one of which is individually tested to determine that it has no defects. Each of the photodetectors which is found to be free of objectionable defects is connected in parallel to a common conducting line to thus produce a combined output when radiation impinges on the detector surface. The connection can be hard wired or provided through a set of transistors acting as connection control intermediaries between the good photodetectors and the common conducting line. The active areas of only good photodetectors are thus combined to form a large photodetector area of any desired shape or size without the usual reliability problems. The selective control of the transistors can further be provided by auxiliary control photodetectors to additionally automatically control the size of the active area in response to the area of light being detected or a control light beam.
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Patent Abstracts of Japan, JP6204548, Jul. 22, 1994.
Bois Philippe
Duboz Jean-Yves
"Thomson-CSF"
Saadat Mahshid D.
Wilson Allan R.
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