Stock material or miscellaneous articles – Circular sheet or circular blank – Recording medium or carrier
Reexamination Certificate
1998-08-03
2001-01-30
Kiliman, Leszek (Department: 1773)
Stock material or miscellaneous articles
Circular sheet or circular blank
Recording medium or carrier
C428S690000, C428S690000, C428S065100, C428S900000, C427S128000, C427S129000, C427S130000, C427S585000
Reexamination Certificate
active
06180202
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a disk on which a large amount of information can be recorded and a method for manufacturing the same, and more particularly, to a large capacity disk on which at least 50 GB of information can be stored and a method for manufacturing the same.
2. Description of the Related Art
FIG. 1
is an extracted and enlarged sectional view of a conventional disk. As shown in
FIG. 1
, the conventional disk has a structure in which a Cr layer
2
and a magnetic layer
3
are sequentially stacked on a substrate
1
. Information storing apparatuses including a hard disk drive (HDD) in which a disk having a similar structure are developed as follows. A disk of a super high capacity of at least 50 Gbit is required to have a structure different from that of the conventional disk since the size of a bit is on a nm scale. Therefore, a new manufacturing method different from that of the conventional disk is required. A method of manufacturing a pillar shape having a diameter of 35 nm by electroplating or a reactive ion etching (RIE) after an E-beam lithography and using it as a single domain, i.e., one bit has been proposed as described in J.Vac.Sci.Tech, Book12, p.3639,1994.
However, mass production cannot be performed by the method considering the level of the current technology. In particular, throughput of the E-beam lithography is low, thus lowering yield of the disk. Therefore, a new manufacturing method by which mass production can be performed and the throughput can be improved is required.
SUMMARY OF THE INVENTION
To solve the above problem(s), it is an objective of the present invention to provide a high density large capacity disk which can be mass produced since a manufacturing process can be performed at a high speed and a method for manufacturing the same.
Accordingly, to achieve the above objective, there is provided a disk, comprising a substrate, a seed layer formed of a discrete island of a predetermined diameter and stacked on the substrate, a Cr layer having a predetermined thickness and discretely stacked on the seed layer, and a magnetic layer magnetically and discretely formed on the Cr layer by a predetermined distance.
In the present invention, the substrate is formed of at least one selected from the group consisting of GaAs, Si, glass, quartz, and Al alloy. The seed layer is formed of materials including InAs and SiGe in which the island can be three dimensionally grown. The diameter of the island is not more than 100 nm in the seed layer. The thickness of the Cr layer is not more than 100 nm. The magnetic layer includes rare earth ferromagnetic materials including Co—X—Y or Sm—Co when X and Y are transition metals. The thickness of the magnetic layer is not more than 100 nm.
To achieve the above objective, there is provided a method for manufacturing a disk, comprising the steps of (a) forming a seed layer on a substrate by a self assembly growth method by discretely growing an island of a predetermined diameter, (b) forming a Cr layer of a predetermined thickness on the seed layer, and (c) magnetically forming a discrete magnetic layer on the Cr layer by a predetermined distance.
In the present invention, the substrate is formed of at least one selected from the group consisting of GaAs, Si, glass, quartz, and Al alloy. Materials including InAs and SiGe in which a three dimensional island growth can be performed are formed by being deposited by an MBE method or an MOCVD method in the step (a). The diameter of the island of the seed layer is formed to be not more than 100 nm in the step (a). The thickness of the Cr layer is formed to be not more than 100 nm in the step (b), The magnetic layer is formed to include rare earth ferromagnetic materials including Co—X—Y or Sm—Co when X and Y are transition metals. The diameter of the island of the magnetic layer is formed to be not more than 100 nm in the step (a).
REFERENCES:
patent: 5134038 (1992-07-01), Baseman
patent: 5413835 (1995-05-01), Ikeda
patent: 5474830 (1995-12-01), Yamaguchi
patent: 5482785 (1996-01-01), Mahvan
patent: 5721033 (1998-02-01), Teng
Bennett, “Self-Assembled InSb and GaSb Quantum Dots . . . ” J. Vac. Sci. Technol. 13/4(9), May/Jun. 1996.
B.R. Bennett et al., “Self-assembled InSb and GaSb quantum dots on GaAs(001),”J. Vac. Sci. Technol. B, vol. 14, No. 3, May/Jun. 1996, pp. 2195-2198.
Peter R. Krauss et al., “Fabrication of single-domain magnetic pillar array of 35 nm diameter and 65 Gbits/in.2density,”J. Vac. Sci. Technol. B, vol. 12, No. 6, Nov./Dec. 1994, pp. 3639-3642.
Burns Doane Swecker & Mathis L.L.P.
Kiliman Leszek
Samsung Electronics Co,. Ltd.
LandOfFree
Large capacity disk and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Large capacity disk and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Large capacity disk and method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2448060