Large area photodiode

Details Large area photodiode Large area photodiode

2006-02-14

2006-02-14

Munson, Gene M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S461000

Reexamination Certificate

active

06998659

ABSTRACT:
A solid state image sensor has an array of pixels formed on an epitaxial layer on a substrate. Each pixel is relatively large so that it has a high light collecting ability, such as 40–60 μm, but the pixel photodiode is relatively small so that it has a low capacitance, such as 4–6 μm. Active elements of the pixel photodiode are formed in wells that are spaced away from the pixel photodiode so that the latter is surrounded by epitaxial material.

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patent: 6084259 (2000-07-01), Kwon et al.
patent: 6150682 (2000-11-01), Sawada et al.
patent: 6163024 (2000-12-01), Kozuka et al.
patent: 0631327 (1994-12-01), None
patent: 61265866 (1986-11-01), None

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