Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-27
2006-06-27
Zarneke, David (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S309000, C257S530000, C257S213000, C257S531000, C257S013000, C438S197000, C438S253000, C438S254000, C438S022000, C438S268000, C438S270000
Reexamination Certificate
active
07067867
ABSTRACT:
A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
REFERENCES:
patent: 5920078 (1999-07-01), Frey
patent: 5962863 (1999-10-01), Russell et al.
patent: 6256767 (2001-07-01), Kuekes et al.
patent: 6274007 (2001-08-01), Smirnov et al.
patent: 6438025 (2002-08-01), Skarupo
patent: 6447663 (2002-09-01), Lee et al.
patent: 6566704 (2003-05-01), Choi et al.
patent: 6586785 (2003-07-01), Flagan et al.
patent: 6760245 (2004-07-01), Eaton, Jr. et al.
patent: 6798000 (2004-09-01), Luyken et al.
patent: 6815218 (2004-11-01), Jacobson et al.
patent: 2002/0117659 (2002-08-01), Lieber et al.
patent: 2002/0127495 (2002-09-01), Scherer
patent: 2002/0130311 (2002-09-01), Lieber et al.
patent: 2002/0130353 (2002-09-01), Lieber et al.
patent: 2002/0163079 (2002-11-01), Awano
patent: 2002/0173083 (2002-11-01), Avouris et al.
patent: 2002/0175408 (2002-11-01), Majumdar et al.
patent: 2003/0012723 (2003-01-01), Clarke
patent: 2003/0042562 (2003-03-01), Giebeler et al.
patent: 2003/0089899 (2003-05-01), Lieber et al.
patent: 2003/0186522 (2003-10-01), Duan et al.
patent: 2003/0189202 (2003-10-01), Li et al.
patent: 2004/0005258 (2004-01-01), Fonash et al.
patent: 2004/0031975 (2004-02-01), Kern et al.
patent: 2004/0036126 (2004-02-01), Chau et al.
patent: 2004/0036128 (2004-02-01), Zhang et al.
patent: 2004/0061422 (2004-04-01), Avouris et al.
patent: 2005/0064618 (2005-03-01), Brown et al.
Chung et al., “Silicon nanowire devices”, American Institute of Physics, vol. 76, No. 15, Apr. 10, 2000, 5 pgs.
Duan et al., “High-performance thin-film transistors using semiconductor nanowires and nanoribbons”, Nature, vol. 425, Sep. 18, 2003, pp. 274-278.
Toshishige Yamada, “Analysis of submicron carbon nanotube field-effect transistors”, Applied Physics Letters, vol. 76, No. 5, Jan. 31, 2000, American Institute of Physics, 5 pgs.
Tans et al., “Room-temperature transistor based on a single carbon nanotube”, Nature, vol. 393, May 7, 1998, 5 pgs.
Bock Lawrence
Chen Jian
Duan Xiangfeng
Empedocles Stephen
Goldman Jay L.
Anya Igwe U.
Filler Andrew L.
Nanosys Inc.
Sterne Kessler Goldstein & Fox PLLC
Zarneke David
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