Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-08
2010-12-14
Such, Matthew W (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29081, C257S009000, C977S938000
Reexamination Certificate
active
07851841
ABSTRACT:
A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
REFERENCES:
patent: 5920078 (1999-07-01), Frey
patent: 5962863 (1999-10-01), Russell et al.
patent: 6256767 (2001-07-01), Kuekes et al.
patent: 6274007 (2001-08-01), Smirnov et al.
patent: 6383923 (2002-05-01), Brown et al.
patent: 6438025 (2002-08-01), Skarupo
patent: 6445006 (2002-09-01), Brandes et al.
patent: 6447663 (2002-09-01), Lee et al.
patent: 6465813 (2002-10-01), Ihm
patent: 6515339 (2003-02-01), Shin et al.
patent: 6566704 (2003-05-01), Choi et al.
patent: 6586785 (2003-07-01), Flagan et al.
patent: 6672925 (2004-01-01), Talin et al.
patent: 6706566 (2004-03-01), Avouris et al.
patent: 6760245 (2004-07-01), Eaton et al.
patent: 6790425 (2004-09-01), Smalley et al.
patent: 6798000 (2004-09-01), Luyken et al.
patent: 6815218 (2004-11-01), Jacobson et al.
patent: 6831017 (2004-12-01), Li et al.
patent: 6838297 (2005-01-01), Iwasaki et al.
patent: 6900479 (2005-05-01), DeHon et al.
patent: 6903717 (2005-06-01), Takahashi et al.
patent: 6996147 (2006-02-01), Majumdar et al.
patent: 7067867 (2006-06-01), Duan et al.
patent: 7358121 (2008-04-01), Chau et al.
patent: 2002/0117659 (2002-08-01), Lieber et al.
patent: 2002/0127495 (2002-09-01), Scherer
patent: 2002/0130311 (2002-09-01), Lieber et al.
patent: 2002/0130353 (2002-09-01), Lieber et al.
patent: 2002/0163079 (2002-11-01), Awano
patent: 2002/0173083 (2002-11-01), Avouris et al.
patent: 2002/0175408 (2002-11-01), Majumdar et al.
patent: 2003/0012723 (2003-01-01), Clarke
patent: 2003/0042562 (2003-03-01), Giebeler et al.
patent: 2003/0089899 (2003-05-01), Lieber et al.
patent: 2003/0178617 (2003-09-01), Appenzeller et al.
patent: 2003/0186522 (2003-10-01), Duan et al.
patent: 2003/0189202 (2003-10-01), Li et al.
patent: 2004/0005258 (2004-01-01), Fonash et al.
patent: 2004/0031975 (2004-02-01), Kern et al.
patent: 2004/0036126 (2004-02-01), Chau et al.
patent: 2004/0036128 (2004-02-01), Zhang et al.
patent: 2004/0061422 (2004-04-01), Avouris et al.
patent: 2004/0213307 (2004-10-01), Lieber et al.
patent: 2004/0238887 (2004-12-01), Nihey
patent: 2005/0064618 (2005-03-01), Brown et al.
patent: 2005/0253137 (2005-11-01), Whang et al.
patent: 0103208 (2001-01-01), None
patent: 0217362 (2002-02-01), None
patent: 0248701 (2002-06-01), None
Chung et al., “Silicon nanowire devices” Am. Inst. Phys. (2000) 76(15).
Duan et al., “High performance thin-film transistors using semiconductor nanowires and nanoribbons” Nature (2003) 425:274-278.
Tans et al., “Room-temperature transistor based on a single carbon nanotube” Nature (1998) 393.
Yamada “Analysis of submicron carbon nanotube field-effect transistors” Appl. Phys Letts (2000) 76(5).
Cui, Y. et al. “Doping and electrical transport in silicon nanowires” J. Phys. Chem. (2000) 104(22):5213-5216.
Cui, Y. et al. “Functional nanoscale electronic devices assembled using silicon nanowire building blocks” Science (2001) 291:851-853.
Duan, X. et al. “Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices” Nature (2001) 409:66-69.
Huang, Y. et al. “Gallium nitride nanowire nanodevices” Nano Lett (2002) 2(2):101-104.
Tao, A. et al. “Langmuir-Blodgett silver nanowire monolayers for molecular sensing using surface-enhanced raman spectroscopy” Nanos Lett (2003) 3(9):1229-1233.
Whang, D. et al. “Large-scale hierarchical organization of nanowires for functional nanosystems” JP J Appl. Phys (2004) 43:4465-4470.
Supplemental Search Report issued Jul. 28, 2009 for corresponding European Application 03776200.2.
Bock Lawrence
Chen Jian
Duan Xiangfeng
Empedocles Stephen A.
Goldman Jay L.
Anya Igwe U
Filler Andrew L.
Nanosys Inc.
Such Matthew W
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