Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-03-27
2007-03-27
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C438S693000, C451S402000, C451S403000
Reexamination Certificate
active
10434772
ABSTRACT:
A method of fabricating a lapping carrier is provided that includes the steps of defining at least one opening extending through a workpiece that is sized to receive a wafer, and cryogenically tempering the workpiece to produce a lapping carrier. By cryogenically tempering the workpiece, the conversion of the crystalline structure of the workpiece to a martensite crystalline structure is enhanced, thereby improving the hardness of the lapping carrier. A lapping carrier is also provided that has a crystalline structure, of which at least 70% is a martensite crystalline structure. An apparatus for lapping a wafer is further provided that includes a hardened lapping carrier and at least one lapping plate proximate the lapping carrier for lapping wafer(s) disposed within the at least one opening defined by the lapping carrier.
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Bex Brian L.
Chen David K.
Alston & Bird LLP
Norton Nadine G.
SEH America Inc.
Tran Binh X.
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