Lapping carrier, apparatus for lapping a wafer and method of...

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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C438S692000, C438S693000, C451S402000, C451S403000

Reexamination Certificate

active

10434772

ABSTRACT:
A method of fabricating a lapping carrier is provided that includes the steps of defining at least one opening extending through a workpiece that is sized to receive a wafer, and cryogenically tempering the workpiece to produce a lapping carrier. By cryogenically tempering the workpiece, the conversion of the crystalline structure of the workpiece to a martensite crystalline structure is enhanced, thereby improving the hardness of the lapping carrier. A lapping carrier is also provided that has a crystalline structure, of which at least 70% is a martensite crystalline structure. An apparatus for lapping a wafer is further provided that includes a hardened lapping carrier and at least one lapping plate proximate the lapping carrier for lapping wafer(s) disposed within the at least one opening defined by the lapping carrier.

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patent: 359024960 (1984-02-01), None

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