Landing pad for use as a contact to a conductive spacer

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S315000, C257S319000, C257S734000

Reexamination Certificate

active

06960803

ABSTRACT:
A landing pad for use as a contact to a conductive spacer adjacent a structure in a semiconductor device comprises two islands, each of which is substantially rectangularly shaped and is spaced apart from one another and from the structure. Conductive spacers are adjacent to each island and overlapping each other and overlapping with the conductive spacer adjacent to the structure. The contact to the landing pad is on the conductive spacers adjacent to the islands and spaced apart from the structure.

REFERENCES:
patent: 6329685 (2001-12-01), Lee
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6525371 (2003-02-01), Johnson et al.
patent: 6759712 (2004-07-01), Bhattacharyya
patent: 6815760 (2004-11-01), Leung et al.
patent: 2004/0203211 (2004-10-01), Yang et al.
patent: 2005/0054167 (2005-03-01), Choi et al.

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