Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-01
2005-11-01
Picardat, Kevin M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S319000, C257S734000
Reexamination Certificate
active
06960803
ABSTRACT:
A landing pad for use as a contact to a conductive spacer adjacent a structure in a semiconductor device comprises two islands, each of which is substantially rectangularly shaped and is spaced apart from one another and from the structure. Conductive spacers are adjacent to each island and overlapping each other and overlapping with the conductive spacer adjacent to the structure. The contact to the landing pad is on the conductive spacers adjacent to the islands and spaced apart from the structure.
REFERENCES:
patent: 6329685 (2001-12-01), Lee
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6525371 (2003-02-01), Johnson et al.
patent: 6759712 (2004-07-01), Bhattacharyya
patent: 6815760 (2004-11-01), Leung et al.
patent: 2004/0203211 (2004-10-01), Yang et al.
patent: 2005/0054167 (2005-03-01), Choi et al.
Lee Dana
Lu Wen-Juei
Tsui Felix (Ying-Kit)
DLA Piper Rudnick Gray Cary US LLP
Picardat Kevin M.
Silicon Storage Technology, Inc.
Yin Ronald L.
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