Land patterns for a semiconductor stacking structure and...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond

Reexamination Certificate

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C257S787000, C257S773000, C257S786000, C257SE23116

Reexamination Certificate

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11190596

ABSTRACT:
A semiconductor device has a substrate and an encapsulation area on a first surface of the substrate. A first plurality of metal lands is on the first surface of the substrate around a periphery of the encapsulation area. Solder mask covers portions of the first plurality of metal lands closest to the encapsulation area. Remaining portions of the first plurality of metal lands are exposed areas having no solder mask.

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