Lamination of organic semiconductor

Details Lamination of organic semiconductor Lamination of organic semiconductor

2006-09-12

2006-09-12

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C427S146000, C156S230000, C156S540000, C257S040000, C257S642000, C257SE39007, C257SE51001

Reexamination Certificate

active

07105462

ABSTRACT:
Low temperature, ambient pressure processes are desired for fabrication of transistors on flexible polymer substrates. Lamination of semiconductors is such a process. The semiconductor is deposited on a donor substrate. The donor is positioned over a receiver substrate, which may be patterned with additional transistor elements. The semiconductor is transferred from the donor to the receiver by lamination.

REFERENCES:
patent: 6197663 (2001-03-01), Chandross et al.
patent: 6335263 (2002-01-01), Cheung et al.
patent: 6852355 (2005-02-01), Blanchet-Fincher
patent: 2002/0160296 (2002-10-01), Wolk et al.
patent: 2004/0108047 (2004-06-01), Afzali-Ardakani et al.
patent: 1237207 (2002-09-01), None
patent: 2002236286 (2002-08-01), None
patent: WO 02/070271 (2002-09-01), None
PCT/US2004/023375, International Search Report dated Jan. 12, 2005.

Affiliated with

Also associated with

Rating

Lamination of organic semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lamination of organic semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lamination of organic semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3594938