Laminated thin-film device, manufacturing method thereof,...

Semiconductor device manufacturing: process – Making passive device – Planar capacitor

Reexamination Certificate

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C483S064000, C483S064000, C483S064000, C257SE21009, C257SE21010

Reexamination Certificate

active

07867869

ABSTRACT:
The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.

REFERENCES:
patent: 6128178 (2000-10-01), Newns
patent: 6720607 (2004-04-01), Basceri et al.
patent: 02-106068 (1990-04-01), None
patent: 06-013572 (1994-01-01), None
patent: 10-178153 (1998-06-01), None
Sze, Semiconductor devices, 1985, pp. 405 and 417.

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