Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Reexamination Certificate
2011-01-11
2011-01-11
Fahmy, Wael M (Department: 2891)
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
C483S064000, C483S064000, C483S064000, C257SE21009, C257SE21010
Reexamination Certificate
active
07867869
ABSTRACT:
The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.
REFERENCES:
patent: 6128178 (2000-10-01), Newns
patent: 6720607 (2004-04-01), Basceri et al.
patent: 02-106068 (1990-04-01), None
patent: 06-013572 (1994-01-01), None
patent: 10-178153 (1998-06-01), None
Sze, Semiconductor devices, 1985, pp. 405 and 417.
Baniecki John David
Kurihara Kazuaki
Shioga Takeshi
Fahmy Wael M
Fujitsu Limited
Kratz Quintos & Hanson, LLP
Yang Minchul
LandOfFree
Laminated thin-film device, manufacturing method thereof,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Laminated thin-film device, manufacturing method thereof,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laminated thin-film device, manufacturing method thereof,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2677830