Laminated substrate, method of manufacturing the substrate,...

Details Laminated substrate, method of manufacturing the substrate,... Laminated substrate, method of manufacturing the substrate,...

2008-05-27

2008-05-27

Menz, Douglas M. (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S455000

Reexamination Certificate

active

10499028

ABSTRACT:
Provided are a bonding substrate whose defective bonding portion in a peripheral region of an active layer has been removed by a polishing applied thereto after a surface grinding, a manufacturing method of the same substrate and wafer periphery pressing jigs. After the surface grinding, a periphery removing polishing is applied from an active layer wafer side of a bonding wafer so that a peripheral region of the active layer may be removed and a central region thereof may be left un-removed. Consequently, a periphery grinding and a periphery etching according to the prior art can be eliminated. Furthermore, an etch pit on a circumferential face of a wafer which could be caused by the periphery etching and a contamination or a scratching in an SOI layer which could be caused by a silicon oxide film left un-ground-off can be prevented, thereby achieving high yield and low cost.

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Mitani, Kiyoshi,Science of Silicon, Surface Science Technology Seriesvol. 3, UCS Semiconductor Substrate Technology Research Association, Realize Inc., pp. 465 and 467, Jun. 28, 1996.

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