Laminated solid-state image sensing apparatus and method of manu

Details Laminated solid-state image sensing apparatus and method of manu Laminated solid-state image sensing apparatus and method of manu

1995-02-14

1996-09-17

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257186, 257233, 257294, H01L 310328, H01L 27148, H01L 31062

Patent

active

055571212

ABSTRACT:
A solid-state image sensing apparatus including: a substrate having a charge storage portion capable of storing charges and an output circuit for outputting a signal in accordance with the charges stored in the storage portion; an insulating film formed on the surface of the substrate and having an opening formed above the charge storage portion; and a photosensitive layer formed on the insulating film and electrically connected to the charge storage portion via the opening, wherein an embedded region is formed within the opening and the surface of the insulating film and that of the embedded region are substantially flattened.

REFERENCES:
patent: 4583002 (1986-04-01), Kondo et al.
patent: 4633287 (1986-12-01), Yamazaki
patent: 4791469 (1988-12-01), Ohmi et al.
patent: 4933731 (1990-06-01), Kimura
patent: 5179430 (1993-01-01), Torikai
Solid State Technology, Dec. 1982, pp. 85-90, Nocholas E. Miller, "CVD Tungsten Interconnect and Contact Barrier Technology for VLSI".

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