Laminated silicate glass layer etch stop method for...

Details Laminated silicate glass layer etch stop method for... Laminated silicate glass layer etch stop method for...

2007-01-09

2007-01-09

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S723000, C438S745000

Reexamination Certificate

active

10278968

ABSTRACT:
A method for fabricating a microelectronic fabrication employs an undoped silicate glass layer as an etch stop layer when etching a doped silicate glass layer with an anhydrous hydrofluoric acid etchant. The method is particularly useful for forming a patterned salicide blocking dielectric layer when fabricating a complementary metal oxide semiconductor device.

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