Laminated complementary thin film transistor device with improve

Details Laminated complementary thin film transistor device with improve Laminated complementary thin film transistor device with improve

1994-12-15

1996-10-22

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 67, 257350, 257351, 257365, 257366, H01L 27108, H01L 2976, H01L 2701

Patent

active

055679595

ABSTRACT:
A combination of a lower thin film transistor formed on an insulating substrate and an upper thin film transistor laminated over the lower transistor has a lower channel formed in the lower transistor, an upper channel formed in the upper transistor, a lower gate electrode disposed under the lower channel, an intermediate gate electrode disposed between the lower channel and the upper channel, and an upper gate electrode disposed over the upper channel.

REFERENCES:
patent: 5162889 (1992-11-01), Itomi
patent: 5266507 (1993-11-01), Wu
patent: 5428238 (1995-06-01), Hayashi et al.

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