Ladder-type gate structure for four-terminal SOI...

Details Ladder-type gate structure for four-terminal SOI... Ladder-type gate structure for four-terminal SOI...

2005-03-01

2005-03-01

Niebling, John F. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S353000, C257S354000

Reexamination Certificate

active

06861716

ABSTRACT:
A ladder-type gate structure for a silicon-on-insulator (SOI) four-terminal semiconductor device is disclosed. The structure includes a gate having a first and second portion, a body region, which is under the first portion of the gate, a body contact, which is adjacent to the second portion of the gate, and a plurality of body contacts connecting the body region to the body contact through a drain region. The gate structure provides an independently controlled body region and includes a substantially uniform voltage across the body region in the SOI semiconductor device.

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