Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1997-03-20
1999-06-22
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257472, 257475, 257483, 257485, H01L 310312, H01L 27095, H01L 2947, H01L 29812
Patent
active
059145005
ABSTRACT:
A semiconductor diode structure with a Schottky junction, wherein a metal contact and a silicon carbide semiconductor layer of a first conducting type form the junction and wherein the edge of the junction exhibits a junction termination divided into a transition belt (TB) having gradually increasing total charge or effective sheet charge density closest to the metal contact and a Junction Termination Extension (JTE) outside the transition belt, the JTE having a charge profile with a stepwise or uniformly deceasing total charge or effective sheet charge density from an initial value to a zero or almost zero total charge at the outermost edge of the termination following a radial direction from the center part of the JTE towards the outermost edge of the termination. The purpose of the transition belt is to reduce the electric field concentration at the edge of the metal contact of the Schottky diode, while the purpose of the junction termination extension is to control the electric field at the periphery of the diode.
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Bakowski Mietek
Gustafsson Ulf
ABB Research Ltd.
Ngo Ngan V.
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