Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-23
2008-11-11
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S213000, C257S347000, C257S352000, C257SE21170, C257SE21051, C257SE21123, C257SE21218, C257SE21229, C257SE21416
Reexamination Certificate
active
07449734
ABSTRACT:
A junction semiconductor device having a drain region including a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region including a low-resistance layer of a first conductive type formed on the other surface of the semiconductor crystal, a gate region of a second conductive type formed on the periphery of the source region, a high-resistance layer of a first conductive type between the source region and the drain region, and a recombination-inhibiting semiconductor layer of a second conductive type provided in the vicinity of the surface of the semiconductor crystal between the gate region and the source region.
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Hashimoto Hideki
Iwanaga Kensuke
Nonaka Ken-ichi
Saito Yoshimitsu
Yokoyama Seiichi
Birch & Stewart Kolasch & Birch, LLP
Honda Motor Co. Ltd.
Nhu David
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