Junction mott transition field effect transistor (JMTFET) and sw

Details Junction mott transition field effect transistor (JMTFET) and sw Junction mott transition field effect transistor (JMTFET) and sw

1998-07-20

2000-09-19

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 43, 257279, 257289, 257295, 257410, H01L 2912, H01L 29772

Patent

active

061216429

ABSTRACT:
A device includes first and second contacts formed on a channel material, a film of doped first insulator material interposed between the first and second contacts, and a second insulator material interfaced with the doped first insulator material with an area of said channel material therebetween. The second insulator material is doped so as to have carriers of opposite charge to those in the channel material.

REFERENCES:
patent: 4583105 (1986-04-01), Rosenberg
patent: 5418389 (1995-05-01), Watanabe
patent: 5623439 (1997-04-01), Gotoh
patent: 5686745 (1997-11-01), Lin et al.
Zhou et al, "A field effect . . . layer" Appl. Phys. Lett 70(5) Feb. 3, 1997 pp. 598-600.

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