Junction-isolated floating diode

Details Junction-isolated floating diode Junction-isolated floating diode

1993-05-26

1995-05-09

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257206, 257495, H01L 29764

Patent

active

054142920

ABSTRACT:
A diode implemented in a junction isolated process protected from minority carrier substrate injection is disclosed. In a preferred embodiment, a diode includes an N+ cathode region and a P+ anode region formed in a P epitaxial region, and an N+ isolation region enclosing the epitaxial region. A CMOS inverter connected to the cathode region shorts the isolation region to either the cathode or the grounded substrate, depending on the voltage at the cathode, and thereby prevents minority carrier injection into the substrate in all conditions.

REFERENCES:
patent: 4825175 (1989-04-01), Tomassetti
patent: 4877749 (1989-10-01), Quigg
patent: 4975764 (1990-12-01), Hsu
patent: 5014105 (1991-06-01), Hata et al.
patent: 5060037 (1991-10-01), Rountree

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