Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-06-07
2005-06-07
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S185010, C365S185260, C257S295000, C257S270000, C257S290000
Reexamination Certificate
active
06903960
ABSTRACT:
Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. Various additional embodiments are described having an array architecture such that two memory cells sharing the same bit line also share the same program line. Using this configuration, non-selected cells are readily supplied with gate/source voltages sufficient to maintain the cells in a deactivated state during read and write operations on selected cells.
REFERENCES:
patent: 4888630 (1989-12-01), Paterson
patent: 5119329 (1992-06-01), Evans, Jr. et al.
patent: 5146299 (1992-09-01), Lampe et al.
patent: 5273927 (1993-12-01), Gnadinger
patent: 5289410 (1994-02-01), Katti et al.
patent: 5345414 (1994-09-01), Nakamura
patent: 5361225 (1994-11-01), Ozawa
patent: 5615144 (1997-03-01), Kimura et al.
patent: 5633821 (1997-05-01), Nishimura et al.
patent: 5654568 (1997-08-01), Nakao
patent: 5680344 (1997-10-01), Seyyedy
patent: 5715196 (1998-02-01), Odake et al.
patent: 5768175 (1998-06-01), Kobayashi
patent: 5812442 (1998-09-01), Yoo
patent: 5847989 (1998-12-01), Seyyedy
patent: 5905672 (1999-05-01), Seyyedy
patent: 5907861 (1999-05-01), Seyyedy
patent: 5909389 (1999-06-01), Kawakubo et al.
patent: 5973911 (1999-10-01), Nishioka
patent: 5990507 (1999-11-01), Mochizuki et al.
patent: 5999439 (1999-12-01), Seyyedy
patent: 6026024 (2000-02-01), Odani et al.
patent: 6028784 (2000-02-01), Mori et al.
patent: 6031754 (2000-02-01), Derbenwick et al.
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6049477 (2000-04-01), Taira
patent: 6067244 (2000-05-01), Ma et al.
patent: 6108236 (2000-08-01), Barnett
patent: 6121072 (2000-09-01), Choi et al.
patent: 6121642 (2000-09-01), Newns
patent: 6144579 (2000-11-01), Taira
patent: 6256220 (2001-07-01), Kamp
patent: 6324101 (2001-11-01), Miyawaki
patent: 6337805 (2002-01-01), Forbes et al.
patent: 6587365 (2003-07-01), Salling
patent: 403101168 (1991-04-01), None
patent: 411040784 (1999-02-01), None
patent: 2001229685 (2001-08-01), None
Huber Brian W.
Salling Craig T.
Elms Richard
Le Toan
Leffert Jay & Polglaze PA
Micro)n Technology, Inc.
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