Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Patent
1999-03-12
2000-05-16
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
438189, H01L 2106, H01L 218252
Patent
active
060636556
ABSTRACT:
A highly uniform, planar and high speed JHEMT-HBT MMIC is fabricated using a single growth process. A multi-layer structure including a composite emitter-channel layer, a base-gate layer and a collector layer is grown on a substrate. The composite emitter-channel layer includes a sub-emitter/channel layer that reduces the access resistance to the HBT's emitter and the JHEMT's channel, thereby improving the HBT's high frequency performance and increasing the JHEMT's current gain. The multi-layer structure is then patterned and metallized to form an HBT collector contact, planar HBT base and JHEMT gate contacts, and planar HBT emitter and JHEMT source and drain contacts.
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Matloubian Mehran
Shealy Jeffrey B.
Bowers Charles
Duraiswamy Vijayalakshmi D.
Hughes Electroncis Corporation
Lortz Bradley K.
Pert Evan
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