Junction-free NAND flash memory and fabricating method thereof

Details Junction-free NAND flash memory and fabricating method thereof Junction-free NAND flash memory and fabricating method thereof

2011-03-29

2011-03-29

Purvis, Sue A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27103, C257SE21680, C438S257000

Reexamination Certificate

active

07915660

ABSTRACT:
A junction-free NAND flash memory is described, including a substrate, memory cells, source/drain inducing (SDI) gates electrically connected with each other, and a dielectric material layer. The memory cells are disposed on the substrate, wherein each memory cell includes a charge storage layer. Each SDI gate is disposed between two neighboring memory cells. The dielectric material layer is disposed between the memory cells and the SDI gates and between the SDI gates and the substrate.

REFERENCES:
patent: 6992929 (2006-01-01), Chen et al.
patent: 2006/0065921 (2006-03-01), Willer et al.
patent: 2006/0199333 (2006-09-01), Chu et al.
patent: 2007/0014155 (2007-01-01), Yoshino

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