Junction field effect transistors with injector region

Details Junction field effect transistors with injector region Junction field effect transistors with injector region

1991-07-09

1992-12-08

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257270, 257212, H01L 2980, H01L 2910, H01L 2974

Patent

active

051702290

ABSTRACT:
An Injector Junction Field Effect Transistor (IJFET) is disclosed which, in addition to having two gates (G1, G2) a drain (D) and a source (S), also has an injector (I). The device may be used as a high impedance charge or current amplifier in, for example, an x-ray fluorescence device. On applying current to the injector carriers are introduced into the channel of the device allowing a small gate leakage current to flow to restore charge to the input. A small restore current is therefore controllable by low impedance injector circuits.

REFERENCES:
patent: 3183128 (1965-05-01), Leistiko et al.
patent: 3755012 (1973-08-01), George et al.
patent: 3999207 (1976-12-01), Arai
Radeka, V., Overload Recovery Circuit for Charge Amplifiers, I.E.E.E. Transactions on Nuclear Science, vol. 17, Feb. 1970, pp. 269-275.
Elad, E., Drain Feedback A Novel Feedback Technique for Low Noise Cryogenic Preamplifiers, 18th Nuclear Science Symposium, Feb. 1972, pp. 403-411.

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