Opto-electronic integrated circuit

Details Opto-electronic integrated circuit Opto-electronic integrated circuit

1990-03-19

1992-12-08

Wilczewski, Mary

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257195, 257458, H01L 3100, H01L 2714

Patent

active

051702282

ABSTRACT:
Present invention is to provide a process for producing an opto-electronic integrated circuit comprising a field effect transistor as an electronic device and a photo-diode as an optical device both formed on an InP substrate,

REFERENCES:
patent: 4636829 (1987-01-01), Greenwood et al.
patent: 4745446 (1988-05-01), Cheng et al.
patent: 4771325 (1988-09-01), Cheng et al.
patent: 4782223 (1988-11-01), Suzuki
patent: 4829346 (1989-05-01), Kasabara et al.
Sasaki et al., "Monolithic pin-HEMT Amplifier on an InP Substrate . . . ," Electron. Lett., vol. 24, No. 19, Sep. 1988, pp. 1201-1202.
Nobuhara et al., "Monolithic pinHEMT Receiver for Long Wavelength Optical Communications," Electron. Lett., vol. 24, No. 19, pp. 1246-1248.
Chang et al., "High-Performance Monolithic Dual-MSM Photodetector . . . ," Electron. Lett., vol. 25, No. 16, Aug. 1989, pp. 1021-1023.
Miura et al., "High-Speed Monolithic GaInAs pinFET," Electron. Lett., vol. 24 No. 7, Mar. 1988, pp. 394-395.
K. Matsuda et al, "A Monolithically Integrated InGaAs/InP Photoreceiver Operating With a Single 5 V Power Supply", ECOC 1987 Technical Digest, vol. 1, Sep. 13, 1987, Helsinki, Finland.

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