Junction field effect transistor random access memory

Details Junction field effect transistor random access memory Junction field effect transistor random access memory

1977-07-11

1978-11-21

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

307238, 307279, 365184, G11C 1140

Patent

active

041268997

ABSTRACT:
A random access memory (RAM) in which each memory cell includes a JFET having two gate electrodes selectable by means of a single word line and a single bit line. The JFETs have a common electrode formed from the substrate of a semiconductor body common to each of the memory cells, which serves as one of the main electrodes of each of the JFETs.

REFERENCES:
patent: 3893151 (1975-01-01), Bosselaar
patent: 3893152 (1975-01-01), Lin

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