Junction field-effect transistor (JFET) semiconductor integrated

Details Junction field-effect transistor (JFET) semiconductor integrated Junction field-effect transistor (JFET) semiconductor integrated

1996-05-22

1998-07-28

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, H01L 2701

Patent

active

057866155

ABSTRACT:
A plurality of JFETs (junction field-effect transistors) can be formed on the same substrate while being electrically separated from each other, and can be also combined with a CMOS (complementary metal-oxide semiconductor). A P.sup.- type Si layer 14 is fabricated on a semiconductor substrate 11 as an island. On this island of P.sup.- type Si layer, an N.sup.+ source region 19 and N.sup.+ drain region, and a channel region having a length of "Lg" and a channel depth of "Tg" are fabricated. The shape of the gate region with the gate length of "Lg" is not a V-shaped-structure. Another P type layer 21 of the gate region is fabricated on the same plane as the source region 19 and the drain region 15.

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