Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-06
2007-03-06
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S410000, C438S216000, C438S261000, C438S287000
Reexamination Certificate
active
10198705
ABSTRACT:
A self-aligned enhancement mode metal-oxide-compound semiconductor field effect transistor includes a gate insulating structure comprised of a first conducting oxide layer comprised of indium oxide compounds positioned immediately on top of the compound semiconductor structure, and a second insulating layer comprised of either gallium oxygen and rare earth elements or gallium sulphur and rare earth elements positioned immediately on top of said first layer.
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Nadav Ori
Neifeld IP Law PC
OSEMI, Inc.
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