Junction barrier schottky with low forward drop and improved...

Details Junction barrier schottky with low forward drop and improved... Junction barrier schottky with low forward drop and improved...

2008-07-08

2008-07-08

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

C257S475000, C257SE31065

Reexamination Certificate

active

07397102

ABSTRACT:
This invention discloses a junction barrier Schottky device supported on a substrate that has a first conductivity type. The Schottky device includes a first diffusion region of a first conductivity type for functioning as a forward barrier height reduction region. The Schottky device further includes a second diffusion region of a second conductivity type disposed immediately adjacent to the first diffusion region for functioning as a backward blocking enhancement region to reduce the backward leakage current.

REFERENCES:
patent: 4149174 (1979-04-01), Shannon
patent: 6383836 (2002-05-01), Fujihira et al.
patent: 6429501 (2002-08-01), Tsuchitani et al.
patent: 7034376 (2006-04-01), Okada et al.

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