Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-03-04
1993-11-09
Hille, Rolf
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505702, 505832, 505874, 257 31, 257 33, 257 36, 365162, H01B 1200, H01L 3912
Patent
active
052602648
ABSTRACT:
One or more superconducting memory cells capable of storing binary values as the presence or absence of a persisting loop current in their superconducting memory loops are connected in series by a circuit current line. This arrangement is provided with a set gate which switches to the voltage state and outputs circuit current from its output terminal to one end of the circuit current line when write command current is supplied to its control terminal and is further provided with a sense gate whose control terminal is series coupled though a capacitance element with the same one end of the circuit current line and whose ground side terminal is connected with the other end of the circuit control line thereby forming through the sense gate a read-out loop for receiving as differential current persisting loop current selectively discharged from the memory loop. The differential current causes the sense gate to switch itself to the voltage state and output a sense current. At least a part of the sense current is supplied to the control terminal of the set gate as rewrite command current. As a result, the read-out of binary values from the superconducting memory loop can be conducted in a manner that is equivalent to nondestructive read-out. As the differential current dissipates automatically over a period of time determined by a prescribed time constant, there remains no residual current which might cause an operational error.
REFERENCES:
patent: 4130893 (1978-12-01), Henkels
patent: 4509146 (1985-04-01), Wang et al.
patent: 4974205 (1990-11-01), Kotani
patent: 5051627 (1991-09-01), Schneier et al.
Aoyagi Masahiro
Kurosawa Itaru
Nakagawa Hiroshi
Agency of Industrial Science & Technology
Hille Rolf
Ministry of International Trade & Industry
Ostrowski David
LandOfFree
Josephson memory circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Josephson memory circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Josephson memory circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1142703