JJ-MOS read access circuit for MOS memory

Details JJ-MOS read access circuit for MOS memory JJ-MOS read access circuit for MOS memory

1991-06-17

1993-10-12

Pascal, Robert J.

Static information storage and retrieval

Systems using particular element

Superconductive

307277, 307306, G11C 1144

Patent

active

052531996

ABSTRACT:
Apparatus for selecting memory cells in a MOS memory array and reading data contained therein. Superconducting Josephson junction devices switch between a superconducting and voltage gap mode for rapid selection of an addressed memory cell row and column, and then read out of the selected memory cell data contained therein.

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patent: 4979205 (1990-11-01), Kotani
Yuh, A buffered Nondestructive-Readout Josephseon Memory Cell with Three Gates, IEEE Trans. Magnetics, vol. 27, No. 2, pp. 2876-2878, Mar. 1991.
S. Nagasawa, et al., 570-ps 13mW Josephson 1-K bit NDRO Ram, IEEE Journal of Solid-State Circuits, vol. 24, No. 5, pp. 401-406, Oct. 1989.
S. T. Flannagan, et al., 8ns CMOS 64K.times.4 and 256K.times.1 SRAMs, IEEE Journal of Solid-State Circuits, vol. 25, No. 5, Oct. 1990, pp. 1049-1056.
T. I. Chappell, et al., A 3.5-ns/77K and 6.2-ns/300K 64K CMOS RAM with ECL Interfaces, IEEE Journal of Solid-State Circuits, vol. 24, No. 4, pp. 859-868, Aug. 1989.
I. Kurosawa, et al., A 1-Kbit Josephson Random Access Memory Using Variable Threshold Cells, IEEE Journal of Solid-State Circuits, vol. 24, No. 4, pp. 395-400, Aug. 1989.

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