JFET Dynamic memory

Static information storage and retrieval – Systems using particular element – Capacitors

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Details

365182, 365189, G11C 1140

Patent

active

044234902

ABSTRACT:
Disclosed is a dynamic random access memory having junction field effect transistors as the transfer gates for the memory cells. Each of these transistors has a negative threshold V.sub.T ; and means are provided for generating voltages V.sub.GH and V.sub.GL on a gate to respectively select and deselect a memory cell, and for generating voltages V.sub.H and V.sub.L to store those voltages in a selected cell wherein V.sub.GH -V.sub.T >V.sub.H, V.sub.GL -V.sub.T <V.sub.L and V.sub.L >V.sub.GH.

REFERENCES:
patent: 3387286 (1968-06-01), Dennard
patent: 3718916 (1973-02-01), Wada et al.
patent: 3986180 (1976-10-01), Cade
patent: 4126900 (1978-11-01), Koomen et al.
patent: 4319342 (1982-03-01), Scheuerlein

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