Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-03-30
2009-06-23
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S189090
Reexamination Certificate
active
07551486
ABSTRACT:
Systems and methods, including computer software for writing to a memory device include applying charge to each of multiple memory cells for storage of a selected data value in each memory cell. The memory cells include a first reference memory cell, and each data value is selected from a group of possible data values. Each possible data value has a corresponding target voltage level, and the first reference memory cell has a corresponding predetermined first reference target voltage level. The voltage level in the first reference memory cell is detected. A determination is made whether the voltage level in the first reference memory cell is less than the first reference target voltage level. Additional charge is applied to the memory cells upon the determination that the voltage level in the first reference memory cell is less than the first reference target voltage.
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Cornwell Michael J.
Dudte Christopher P.
Apple Inc.
Auduong Gene N.
Fish & Richardson P.C.
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