Isotropic polysilicon plus nitride stripping

Details Isotropic polysilicon plus nitride stripping Isotropic polysilicon plus nitride stripping

1994-04-29

2000-08-29

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438723, 438724, 252 793, H01L 21302

Patent

active

061108383

ABSTRACT:
A dry etch process for stripping LOCOS nitride masks (302) with fluorine based removal of oxynitride (312) followed by fluorine plus chlorine based removal of nitride (302) and any silicon buffer layer (303) without removal of pad oxide (304).

REFERENCES:
patent: 4255230 (1981-03-01), Zajac
patent: 4568410 (1986-02-01), Thornquist
patent: 4789426 (1988-12-01), Pipkin
patent: 4837180 (1989-06-01), Chao
patent: 4885054 (1989-12-01), Shibagaki
patent: 5047115 (1991-09-01), Charlet et al.
patent: 5387312 (1995-02-01), Keller et al.
patent: 5421957 (1995-06-01), Carlson et al.
patent: 5437765 (1995-08-01), Loewenstein
patent: 5560804 (1996-10-01), Higuchi et al.
"Highly Selective Etching of Silicon Nitride (Si.sub.3 N.sub.4) to Silicon Dioxide Employing Fluorine and Chlorine Atoms Generated By Microwave Discharge"; Suto et al.; J. Electrochem. Soc. (1989'), 136(7); 2032-2034.
"Highly Selective Etching of Silicon Nitride Over Silicon Dioxide Employing Down Stream Type Reactor"; Solid State Tech. (1988'); 31(4); pp. 127-130; Hayasaka et al.

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