Isotropic polycrystalline silicon

Details Isotropic polycrystalline silicon Isotropic polycrystalline silicon

2007-08-14

2007-08-14

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C257S066000, C257S075000, C257SE33003, C257SE29292, C257SE21133, C438S187000, C438S482000, C438S487000

Reexamination Certificate

active

11099198

ABSTRACT:
A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of the a-Si film. The method then anneals a second area, included in the first area, using a Laser-Induced Lateral Growth (LILaC) process. In some aspects, a 2N-shot laser irradiation process is used as the LILaC process. In some aspects, a directional solidification process is used as the LILaC process. In response to using the MISPC film as a precursor film, the method forms low angle grain boundaries in poly-Si in the second area.

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