Isotropic etching of silicon strain gages

Details Isotropic etching of silicon strain gages Isotropic etching of silicon strain gages

1979-06-04

1980-09-16

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29610SG, 156657, 1566591, 156662, 338 4, 427 88, G01L 122, H01L 21308

Patent

active

042228158

ABSTRACT:
A method of etching a silicon diffused resistance pressure transducer assembly (13) of a transducer (10) mounted on a glass base (14) providing a thin flexible area on the transducer in the region of the diffused resistors (15) and a thick rigid area in the region where the transducer is mounted to the glass base (14). To accomplish this, the transducer (10) is first bonded to the glass base (14) which is tubular, thus providing a circular area on the backside (16) of the transducer (10) open to ambient. This open area is then filled with an isotropic etchant which etches silicon material but which has little effect on glass material. Thus, the region of the diffused resistors (15) is etched out to provide a thin flexible area while leaving a thick area where the transducer (10) is mounted to the glass base (14).

REFERENCES:
patent: 3677848 (1972-07-01), Stoller et al.
patent: 3701705 (1972-10-01), Hetrich
patent: 3743842 (1973-07-01), Smith
patent: 4019388 (1977-04-01), Hall et al.
patent: 4025942 (1977-05-01), Kurtz
patent: 4170512 (1979-10-01), Flanders et al.

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