Isotopically pure silicon-on-insulator wafers and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S352000, C257S616000

Reexamination Certificate

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06867459

ABSTRACT:
The present invention provides improved semiconductor wafer structures having isotopically-enriched layers and methods of making the same.

REFERENCES:
patent: 5144409 (1992-09-01), Ma
patent: 5442191 (1995-08-01), Ma
patent: 5917195 (1999-06-01), Brown
patent: 6084895 (2000-07-01), Kouchi et al.
patent: 6344375 (2002-02-01), Orita et al.
patent: 6365098 (2002-04-01), Fulbright
patent: 6392220 (2002-05-01), Slater et al.
patent: 6661065 (2003-12-01), Kunikiyo
patent: 20002000069557 (2000-12-01), None
patent: 20002000007224 (2001-07-01), None
Wolf, S., et al., Silicon Processing for the VLSI Era, vol. 1—Process Technology, Lattice Press, 1986, pp. 151-155.

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