Isolation trench having first and second trench areas of...

Details Isolation trench having first and second trench areas of... Isolation trench having first and second trench areas of...

2011-08-16

2011-08-16

Lindsay, Jr., Walter L (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S512000, C257S638000, C257S644000, C257SE29020

Reexamination Certificate

active

07999328

ABSTRACT:
A method of forming and resulting isolation region, which allows for densification of an oxide layer in the isolation region. One exemplary embodiment of the method includes the steps of forming a first trench, forming an oxide layer on the bottom and sidewalls of the trench, forming nitride spacers on the lined trench, and thereafter etching the silicon beneath the first trench to form a second trench area. An oxide layer is then deposited to fill the second trench. Densification of the isolation region is possible because the silicon is covered with nitride, and therefore will not be oxidized. Light etches are then performed to etch the oxide and nitride spacer area in the first trench region. A conventional oxide fill process can then be implemented to complete the isolation region.

REFERENCES:
patent: 4472240 (1984-09-01), Kameyama
patent: 5384280 (1995-01-01), Aoki et al.
patent: 5411913 (1995-05-01), Bashir et al.
patent: 5895253 (1999-04-01), Akram
patent: 6150212 (2000-11-01), Divakaruni et al.
patent: 6265292 (2001-07-01), Parat et al.
patent: 6399986 (2002-06-01), Ha
patent: 6461937 (2002-10-01), Kim et al.
patent: 6586314 (2003-07-01), Siah et al.
patent: 6849919 (2005-02-01), Sumino et al.
patent: 6967146 (2005-11-01), Dickerson et al.
patent: 7375410 (2008-05-01), Ho et al.

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