Isolation trench geometry for image sensors

Details Isolation trench geometry for image sensors Isolation trench geometry for image sensors

2006-06-30

2009-10-27

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S222000, C257S510000, C257SE27132

Reexamination Certificate

active

07608870

ABSTRACT:
A pixel cell including a substrate having a top surface. A photo-conversion device is at a surface of the substrate and a trench is in the substrate adjacent the photo-conversion device. The trench has sidewalls and a bottom. At least one sidewall is angled less than approximately 85 degrees from the plane of the top surface of the substrate.

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