Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-12-27
2005-12-27
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S435000
Reexamination Certificate
active
06979627
ABSTRACT:
A process for forming an isolation trench in a wafer. The process includes depositing (e.g. by a directional deposition process) a first dielectric material in the trench and then depositing a second dielectric material (e.g. by a directional deposition process) over the first dielectric material in the trench. A third material is deposited in the trench on the second layer. The second material and the third material are selectively etchable with respect to each other. In one example, the first material has a lower dielectric constant than the second material.
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Jeon Yongjoo
Turner Michael D.
Van Gompel Toni D.
Yeap Choh-Fei
Balconi-Lamica Michael J.
Dolezal David G.
Freescale Semiconductor Inc.
Malsawma Lex H.
Smith Matthew
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