Isolation structure with nitrogen-containing liner and...

Details Isolation structure with nitrogen-containing liner and... Isolation structure with nitrogen-containing liner and...

2005-12-13

2005-12-13

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S221000, C438S296000, C438S359000

Reexamination Certificate

active

06974755

ABSTRACT:
A semiconductor isolation trench includes a substrate and a trench formed therein. The trench is lined with a nitrogen-containing liner and filled with a dielectric material. The nitrogen-containing liner preferably contacts the active region of a device, such as a transistor, located adjacent to the trench.

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