Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-26
2009-02-03
Mai, Anh D (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S545000, C257S345000, C257S544000, C257SE29019
Reexamination Certificate
active
07485922
ABSTRACT:
In a semiconductor device of the present invention, an N type epitaxial layer is formed on a P type single crystal silicon substrate. The substrate and the epitaxial layer are partitioned into a plurality of element formation regions by isolation regions. Each of the isolation regions is formed of a P type buried diffusion layer and a P type diffusion layer coupled thereto. The P type buried diffusion layer is joined to N type buried diffusion layers on both sides thereof to form PN junction regions. On the other hand, the P type diffusion layer is joined to N type diffusion layers on both sides thereof to form PN junction regions. This structure suppresses extension of widthwise diffusion of the P type buried diffusion layer and the P type diffusion layer, thus making it possible to reduce the device size.
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Kanda Ryo
Kikuchi Shuichi
Otake Seiji
Garrity Diana C
Mai Anh D
Morrison & Foerster / LLP
Sanyo Electric Co,. Ltd.
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