Isolation structure for deflectable nanotube elements

Details Isolation structure for deflectable nanotube elements Isolation structure for deflectable nanotube elements

2007-10-30

2010-02-16

Hu, Shouxiang (Department: 2811)

Static information storage and retrieval

Systems using particular element

Electrical contacts

C365S164000, C977S940000, C977S943000, C257S415000, C257S420000, C257SE27004

Reexamination Certificate

active

07663911

ABSTRACT:
Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node.

REFERENCES:
patent: 6128214 (2000-10-01), Kuekes et al.
patent: 6256767 (2001-07-01), Kuekes et al.
patent: 6314019 (2001-11-01), Kuekes et al.
patent: 6445006 (2002-09-01), Brandes et al.
patent: 6548841 (2003-04-01), Frazier et al.
patent: 6625047 (2003-09-01), Coleman, Jr.
patent: 6707098 (2004-03-01), Hofmann et al.
patent: 6759693 (2004-07-01), Vogeli et al.
patent: 6803840 (2004-10-01), Hunt et al.
patent: 6809465 (2004-10-01), Jin
patent: 6918284 (2005-07-01), Snow et al.
patent: 6919592 (2005-07-01), Segal et al.
patent: 6990009 (2006-01-01), Bertin et al.
patent: 7115901 (2006-10-01), Bertin et al.
patent: 7115960 (2006-10-01), Bertin et al.
patent: 7161403 (2007-01-01), Bertin
patent: 7289357 (2007-10-01), Bertin et al.
patent: 2001/0023986 (2001-09-01), Mancevski
patent: 2002/0175390 (2002-11-01), Goldstein et al.
patent: 2003/0132823 (2003-07-01), Hyman et al.
patent: 2003/0200521 (2003-10-01), DeHon et al.
patent: 2005/0068128 (2005-03-01), Yip
patent: 2006/0237537 (2006-10-01), Empedocles et al.
patent: 2009/0091352 (2009-04-01), Bertin et al.
patent: 2 364 933 (2002-02-01), None
patent: WO-00/48195 (2000-08-01), None
patent: WO-01/03208 (2001-01-01), None
Martel, R., et al, “Carbon Nanotube Field-Effect Transistors and Logic Circuits,”DAC 2002, Jun. 10-12, 2002, vol. 7.4, pp. 94-98.
Avouris, P., et al., “Carbon Nanotube Electronics,” Chemical Physics, 2002, vol. 284, pp. 429-445.
Batchtold, A., et al., “Logic circuits cased on carbon nanotubes,”Physica E, 2003, vol. 16, pp. 42-46.
Chen, J. et al., “Self-aligned carbon nanotube transistors with charge transfer doping”,Applied Physics Letters, vol. 86, pp. 123108-1-123108-3, 2005.
Chen, J. et al., “Self-aligned Carbon Nanotube Transistors with Novel Chemical Doping”,IEDM, pp. 29.4.1-29.4.4, 2004.
Derycke, V. et al., “Controlling doping and carrier injection in carbon nanotube transistors”,Applied Physics Letters, vol. 80, No. 15, pp. 2773-2775, Apr. 15, 2002.
Derycke, V., et al., “Carbon Nanotube Inter- and Intramolecular Logic Gates,”Nano Letters, Sep. 2001, vol. 1, No. 9, pp. 453-456.
Duan, X. et al., “Nonvolatile Memory and Programmable Logic from Molecule-Gated Nanowires”,Nano Letters, vol. 0, No. 0, pp. A-D, 2002.
Heinze, S. et al., “Carbon Nanotubes as Schottky Barrier Transistsors”,Physical Review Letters, vol. 89, No. 10, pp. 16801-1-106801-4, 2002.
Huang, Y., et al “Logic Gates and Computation from Assembled Nanowire Building Blocks,”Science, Nov. 9, 2001, vol. 294, pp. 1313-1316.
Javey, A. et al., “Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-k Gate Dielectrics”,Nano Letters, vol. 4, No. 3, pp. 447-450, 2004.
Javey, A. et al., “High-k dielectrics for advanced carbon-nanotube transistors and logic gates”,Nature Materials, vol. 1, pp. 241-246, Dec. 2002.
Javey, A., et al., “Carbon Nanotube Transistor Arrays for Multistage Complementary Logic and Ring Oscillators,”Nano Letters, 2002, vol. 2 , No. 9, pp. 929-932.
Lin, Y.M. et al., “Novel Carbon Nanotube FET Design with Tunable Polarity”,IEDM, pp. 29.2.1-29.2.4, 2004.
Radosavljevic, M. et al., “Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors”, Nano Letters, 2002. 2 (7) 761-764. cited by other.
Rueckes, T., et al., “Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing”, Science, vol. 289, Issue 5476, Jul. 7, 2000, pp. 94-97.
Wind, S. J. et al., “Fabrication and Electrical Characterization of Top Gate Single-Wall Carbon Nanotube Field-Effect Transistors”, 14 pages.
Wind, S. J. et al., “Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes”,Applied Physics Letters, vol. 80, No. 20, pp. 3817-3819, May 20, 2002.

Affiliated with

Also associated with

Rating

Isolation structure for deflectable nanotube elements does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Isolation structure for deflectable nanotube elements, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Isolation structure for deflectable nanotube elements will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4234908